InGaAs and Silicon Integrated Photo detectors
Detailed Product Description
InGaAs and Silicon Integrated Photo Detectors
Features: Integrated InGaAs and Silicon photodector chips Cover 400~1700nm response wavelength Standard TO5 package | |
Applications: Optical measurement equipment Optical communication Analytical equipment, etc. |
Absolute Maximum Ratings
Parameter | Symbol | Value | Unit | |
Silicon | InGaAs | |||
Operating Temperature | Top | -40~+85 | -40~+85 | °C |
Storage Temperature | Tstg | -40 ~ +125 | -40 ~ +125 | °C |
Reverse Voltage | Vr | 100 | 50 | V |
Reverse Current | Ir | 10 | 10 | μA |
Specifications | Testing condition | GCPD-12P12 | Unit | |
Silicon | InGaAs | |||
Sensitive Area | - | E2 | E1 | mm |
Responsibility | Vr=15V, λ=530nm | ≥0.2 | - | A/W |
Vr=15V, λ=1060nm | ≥0.3 | - | ||
Responsibility | Vr=5V, λ=1310nm | - | ≥0.5 | A/W |
Vr=5V, λ=1550nm | - | ≥0.5 | ||
Response Spectrum | - | 400~1700 | nm | |
Dark Current (Typical) | Vr=15V | ≤40 | - | nA |
Vr=5V | - | ≤10 | ||
Rise / Fall time | Vr=15V, R=50Ω | 10 | - | ns |
Vr=5V, R=50Ω | - | 10 | ||
Saturation Power(Typical) | Vr=5V | ≥2 | 2 | mW |
Package Style | - | TO5 | - | |
InGaAs and Silicon Integrated Photo detectors
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Company Info
China Daheng Group, Inc.
[China (Mainland)]
[Verified Member]
City: Beijing
Province/State: Beijing
Country/Region : China (Mainland)
Business Type:Manufacturer
Online Postings: Products